NSN 5961-00-892-0988 of Semiconductor Device Thyristor - Parts Details
| Alternative NSN: 5961008920988 |
| Item Name: Semiconductor Device Thyristor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008920988 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Alpine Industries Inc , Esco Corp , Freescale Semiconductor Inc , Gilbert Engineering Co Inc Incon , On Semiconductors , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE3171, 2N1597 under NSN 5961-00-892-0988 of Semiconductor Device Thyristor manufactured by Electronic Industries Association, Alpine Industries Inc, Esco Corp, Freescale Semiconductor Inc, Gilbert Engineering Co Inc Incon.
Federal Supply Class of NSN 5961-00-892-0988 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-892-0988, 5961008920988
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Part No Manufacturer Item Name QTY RFQ RELEASE3171 Electronic Industries Association semiconductor device thyristor Avl RFQ 2N1597 Alpine Industries Inc semiconductor device thyristor Avl RFQ 2N1597 Electronic Industries Association semiconductor device thyristor Avl RFQ 2N1597 Esco Corp semiconductor device thyristor Avl RFQ 2N1597 Freescale Semiconductor Inc semiconductor device thyristor Avl RFQ 2N1597 Gilbert Engineering Co Inc Incon semiconductor device thyristor Avl RFQ 2N1597 On Semiconductors semiconductor device thyristor Avl RFQ 2N1597 Texas Instrument Inc semiconductor device thyristor Avl RFQ
Characteristics Data of NSN 5961008920988MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 2.0 MAXIMUM ON-STATE VOLTAGE, DC CTQX CURRENT RATING PER CHARACTERISTIC 1.00 AMPERES FORWARD CURRENT, TOTAL RMS NANOAMPERES AND 10.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 80.0 DEG CELSIUS CASE FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: PNPN TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 2.0 MAXIMUM ON-STATE VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES FORWARD CURRENT, TOTAL RMS NANOAMPERES AND 10.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 80.0 DEG CELSIUS CASE |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |