NSN 5961-00-900-0079 of Transistor - Parts Details
| Alternative NSN: 5961009000079 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 009000079 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Edo Corporation , Adelco Elektronik Gmbh , Solitron Devices Inc , Lacon Electronic Gmbh , Siliconix Incorporated Div Silic |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE 4211, 68999-1, 2N2842A, 2N2842, 2N2841 under NSN 5961-00-900-0079 of Transistor manufactured by Electronic Industries Association, Edo Corporation, Adelco Elektronik Gmbh, Solitron Devices Inc, Lacon Electronic Gmbh.
Federal Supply Class of NSN 5961-00-900-0079 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-900-0079, 5961009000079
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Part No Manufacturer Item Name QTY RFQ RELEASE 4211 Electronic Industries Association transistor Avl RFQ 68999-1 Edo Corporation transistor Avl RFQ 2N2842A Adelco Elektronik Gmbh transistor Avl RFQ 2N2842 Adelco Elektronik Gmbh transistor Avl RFQ 2N2842 Solitron Devices Inc transistor Avl RFQ 2N2842 Electronic Industries Association transistor Avl RFQ 2N2842 Lacon Electronic Gmbh transistor Avl RFQ 2N2842 Siliconix Incorporated Div Silic transistor Avl RFQ 2N2841 Siliconix Incorporated Div Silic transistor Avl RFQ
Characteristics Data of NSN 5961009000079MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 0.33 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.33 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |