NSN 5961-00-914-6005 of Semiconductor Device Diode - Parts Details
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 03E04004, 100432-004, 1194006P1, 152-0066-03, 153002 under NSN 5961-00-914-6005 of Semiconductor Device Diode manufactured by Hekimian Laboratories Inc, Aero Systems Engineering Inc, Bae Systems, Tektronix Inc, Dictaphone Corporation.
Federal Supply Class of NSN 5961-00-914-6005 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-914-6005, 5961009146005
-
Part No Manufacturer Item Name QTY RFQ 03E04004 Hekimian Laboratories Inc semiconductor device diode Avl RFQ 100432-004 Aero Systems Engineering Inc semiconductor device diode Avl RFQ 1194006P1 Bae Systems semiconductor device diode Avl RFQ 152-0066-03 Tektronix Inc semiconductor device diode Avl RFQ 153002 Dictaphone Corporation semiconductor device diode Avl RFQ 19019-1899 Atlantic Inertial Systems Inc semiconductor device diode Avl RFQ 1947113-4 Honeywell Intl Inc semiconductor device diode Avl RFQ 1947113-4 Honeywell International Inc semiconductor device diode Avl RFQ 1N4003 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N4004 Texas Instrument Inc semiconductor device diode Avl RFQ 1N4004 Electronic Industries Association semiconductor device diode Avl RFQ 1N4004 Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4004 Raytheon Electronic Systems Inc semiconductor device diode Avl RFQ 1N4004 Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N4004 Itt Semiconductors Division semiconductor device diode Avl RFQ 1N4004 Esco Corp semiconductor device diode Avl RFQ 1N4004 General Dynamics C4 Systems Inc semiconductor device diode Avl RFQ 1N4004 Tektronix Inc semiconductor device diode Avl RFQ 1N4004 Rca Corp semiconductor device diode Avl RFQ 1N4004 Microsemi Corporation semiconductor device diode Avl RFQ 1N4004 Motorola Inc semiconductor device diode Avl RFQ 1N4004 Minnesota Mining And Mfg Co semiconductor device diode Avl RFQ 1N4004 Winder Power Limited semiconductor device diode Avl RFQ 1N4004A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 210004 Eads North America Inc semiconductor device diode Avl RFQ 276-1103 Radioshack Com L P semiconductor device diode Avl RFQ 2887.122 Rosenbauer Brandweertechniek semiconductor device diode Avl RFQ 2899056-01 Unisys Corp semiconductor device diode Avl RFQ 30579 L And R Manufacturing Co Inc semiconductor device diode Avl RFQ 353-6442-040 Rockwell Collins Inc semiconductor device diode Avl RFQ 420-0203 Paeaeesikunta Logistiikkaosasto semiconductor device diode Avl RFQ 541146-003 Marathonnorco Aerospace Inc semiconductor device diode Avl RFQ 5921240 Tadiran Ltd semiconductor device diode Avl RFQ 6081-1002 Genrad Inc semiconductor device diode Avl RFQ 81-27123100-3 Minnesota Mining And Mfg Co semiconductor device diode Avl RFQ 837777-2 Itt Telecom Products Corp Networks semiconductor device diode Avl RFQ 840DR0061 Oto Melara Spa semiconductor device diode Avl RFQ CR-0725 Harris Corporation semiconductor device diode Avl RFQ DI0004304A Arbiter Systems Incorporated semiconductor device diode Avl RFQ FBL00-064 Veeco Instruments semiconductor device diode Avl RFQ RELEASE 4190 Electronic Industries Association semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961009146005MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.205 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.100 INCHES MINIMUM ADAV OVERALL DIAMETER 0.107 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CRTL CRITICALITY CODE JUSTIFICATION FEAT CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 400.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 1.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR FEAT SPECIAL FEATURES WEAPONSYSTEM ESSENTIAL. TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.205 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.100 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REVERSE VOLTAGE, PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
FEAT | SPECIAL FEATURES | WEAPONSYSTEM ESSENTIAL. |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |