NSN 5961-00-950-9887 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961009509887 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 009509887 |
| NCB Code: USA (00) |
| Manufacturers: Thales Nederland , Eads Deutschland Gmbh Verteidig , Adelco Elektronik Gmbh , Itt Cannon , Rohde And Schwarz Inc , Selex Galileo Ltd , Litton Systems Inc , Alcatellucent Network Systems , Inspektorat Wsparcia Sil Zbrojnych , Thales Electronic Systems Gmbh , Raytheon Aircraft , Eip Microwave Inc , Edo Corporation , Bi Technologies Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VBE890-1N827, Q62702Z606Z, JAN1N827AA, G390217S1, AE0846305 under NSN 5961-00-950-9887 of Semiconductor Device Diode manufactured by Thales Nederland, Eads Deutschland Gmbh Verteidig, Adelco Elektronik Gmbh, Itt Cannon, Rohde And Schwarz Inc.
Federal Supply Class of NSN 5961-00-950-9887 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-950-9887, 5961009509887
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Part No Manufacturer Item Name QTY RFQ VBE890-1N827 Thales Nederland semiconductor device diode Avl RFQ Q62702Z606Z Eads Deutschland Gmbh Verteidig semiconductor device diode Avl RFQ JAN1N827AA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ G390217S1 Itt Cannon semiconductor device diode Avl RFQ AE0846305 Rohde And Schwarz Inc semiconductor device diode Avl RFQ A32-9638-50 Selex Galileo Ltd semiconductor device diode Avl RFQ 947060-8270 Litton Systems Inc semiconductor device diode Avl RFQ 933072120682 Alcatellucent Network Systems semiconductor device diode Avl RFQ 5961PL0911108 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 44397 28155 Thales Electronic Systems Gmbh semiconductor device diode Avl RFQ 44371 50619 Thales Electronic Systems Gmbh semiconductor device diode Avl RFQ 4178800-247 Raytheon Aircraft semiconductor device diode Avl RFQ 352250009927 Thales Nederland semiconductor device diode Avl RFQ 2700827-00 Eip Microwave Inc semiconductor device diode Avl RFQ 1N827 Edo Corporation semiconductor device diode Avl RFQ 1N827 Bi Technologies Corporation semiconductor device diode Avl RFQ 0846305 Rohde And Schwarz Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961009509887MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 0.03 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 35.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.03 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION |