NSN 5961-00-954-5817 of Transistor - Parts Details
| Alternative NSN: 5961009545817 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 009545817 |
| NCB Code: USA (00) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems , Texas Instrument Inc , Raytheon Aircraft , Silicon Graphics Inc , Gpd Global Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 666215-721, 2N2188, 2N1039 under NSN 5961-00-954-5817 of Transistor manufactured by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems, Texas Instrument Inc, Raytheon Aircraft, Silicon Graphics Inc, Gpd Global Inc.
Federal Supply Class of NSN 5961-00-954-5817 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-954-5817, 5961009545817
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Part No Manufacturer Item Name QTY RFQ 666215-721 Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems transistor Avl RFQ 2N2188 Texas Instrument Inc transistor Avl RFQ 2N2188 Raytheon Aircraft transistor Avl RFQ 2N1039 Silicon Graphics Inc transistor Avl RFQ 2N1039 Gpd Global Inc transistor Avl RFQ
Characteristics Data of NSN 5961009545817MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0 335 INCHES NOMINAL ABJT TERMINAL LENGTH 1 500 INCHES MINIMUM ADAV OVERALL DIAMETER 0 265 INCHES NOMINAL ALAS INTERNAL CONFIGURATION JUNCTION CONTACT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0 100 INCHES NOMINAL CTMZ SEMICONDUCTOR MATERIAL GERMANIUM CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40 0 MAXIMUM BREAKDOWN VOLTAGE COLLECTOR-TO-BASE EMITTER OPEN AND 25 0 MAXIMUM BREAKDOWN VOLTAGE COLLECTOR-TO-EMITTER BASE OPEN AND 2 0 MAXIMUM BREAKDOWN VOLTAGE EMITTER-TO-BASE COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 30 00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 125 0 MILLIWATTS SMALL-SIGNAL INPUT POWER COMMON-COLLECTOR MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100 0 DEG CELSIUS JUNCTION FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT PNP TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0 335 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1 500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0 265 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0 100 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | GERMANIUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40 0 MAXIMUM BREAKDOWN VOLTAGE COLLECTOR-TO-BASE EMITTER OPEN AND 25 0 MAXIMUM BREAKDOWN VOLTAGE COLLECTOR-TO-EMITTER BASE OPEN AND 2 0 MAXIMUM BREAKDOWN VOLTAGE EMITTER-TO-BASE COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 30 00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 125 0 MILLIWATTS SMALL-SIGNAL INPUT POWER COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100 0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT PNP |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |