NSN 5961-00-978-7660 of Semiconductor Device Diode - Parts Details
Alternative NSN: 5961009787660 |
Item Name: Semiconductor Device Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 009787660 |
NCB Code: USA (00) |
Manufacturers: Eaton Electrical Inc , Freescale Semiconductor Inc , Rca Corp , Electronic Industries Association , International Rectifier Corporation , General Electric Company , Hamilton Sundstrand Corporation , Raytheon Aircraft , Eaton Corp , Rockwell Collins Inc , Boeing Company , Dresser Industries Inc , Picatinny Arsenal , Itt Cannon , Itt Industries Inc , Dla Land And Maritime , Vickers Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1982, 1N1254, 1N2862A, 1N361A, 1N540 under NSN 5961-00-978-7660 of Semiconductor Device Diode manufactured by Eaton Electrical Inc, Freescale Semiconductor Inc, Rca Corp, Electronic Industries Association, International Rectifier Corporation.
Federal Supply Class of NSN 5961-00-978-7660 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-978-7660, 5961009787660
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Part No Manufacturer Item Name QTY RFQ 1982 Eaton Electrical Inc semiconductor device diode Avl RFQ 1N1254 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N2862A Rca Corp semiconductor device diode Avl RFQ 1N2862A Electronic Industries Association semiconductor device diode Avl RFQ 1N361A International Rectifier Corporation semiconductor device diode Avl RFQ 1N540 General Electric Company semiconductor device diode Avl RFQ 1N540 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 232-1116P5 Raytheon Aircraft semiconductor device diode Avl RFQ 234611 Rca Corp semiconductor device diode Avl RFQ 320-0 Eaton Corp semiconductor device diode Avl RFQ 353-1649-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 4178600-13 Raytheon Aircraft semiconductor device diode Avl RFQ 4178600-200 Raytheon Aircraft semiconductor device diode Avl RFQ 479-0745-002 Boeing Company semiconductor device diode Avl RFQ 490838 Dresser Industries Inc semiconductor device diode Avl RFQ 830660 Picatinny Arsenal semiconductor device diode Avl RFQ 8830660 Picatinny Arsenal semiconductor device diode Avl RFQ A2133611 Itt Cannon semiconductor device diode Avl RFQ CA151FA Itt Industries Inc semiconductor device diode Avl RFQ DMS 89034B Dla Land And Maritime semiconductor device diode Avl RFQ JAN-1N540 Vickers Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961009787660MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.800 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.310 INCHES MINIMUM AND 0.400 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 480.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 280.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS CTQX CURRENT RATING PER CHARACTERISTIC 250.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/202 GOVERNMENT SPECIFICATION
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.800 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.310 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 280.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS |
CTQX | CURRENT RATING PER CHARACTERISTIC | 250.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/202 GOVERNMENT SPECIFICATION |