NSN 5961-00-985-0640 of Transistor - Parts Details
Alternative NSN: 5961009850640 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 009850640 |
NCB Code: USA (00) |
Manufacturers: Industro Transistor Corp , Semiconductor Technology Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TRS6604S, ST1-TRS6604S under NSN 5961-00-985-0640 of Transistor manufactured by Industro Transistor Corp, Semiconductor Technology Inc.
Federal Supply Class of NSN 5961-00-985-0640 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-985-0640, 5961009850640
Characteristics Data of NSN 5961009850640MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS AND METAL ABHP OVERALL LENGTH 0.260 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.370 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 800.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 660.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS AND METAL |
ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 800.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 660.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET |
CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |