NSN 5961-00-990-3049 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961009903049 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 009903049 |
| NCB Code: USA (00) |
| Manufacturers: Eads Deutschland Gmbh Verteidig , International Rectifier Corporation , Veeco Instruments , Litton Systems Inc , Thales Communications Inc , Genrad Inc , Inspektorat Wsparcia Sil Zbrojnych , Eca Etablissement Central Des , Westinghouse Electric Corp , Hamilton Sundstrand Corporation , Gte Products Corp , Raytheon Aircraft , Raytheon Technical Services Company , Rockwell Collins Inc , Gte Communication Systems Corp , Tyco Electronics , Adelco Elektronik Gmbh , Joint Electronics Type Designation Systemes , Microsemi Corporation , Electronic Industries Association , Telcom Semiconductor Inc , Texas Instrument Inc , Bae Systems , Systron Donner Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers Q62702Z829Z, IN935, FBMZ103, 947060-9352, 848121-0001 under NSN 5961-00-990-3049 of Semiconductor Device Diode manufactured by Eads Deutschland Gmbh Verteidig, International Rectifier Corporation, Veeco Instruments, Litton Systems Inc, Thales Communications Inc.
Federal Supply Class of NSN 5961-00-990-3049 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-990-3049, 5961009903049
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Part No Manufacturer Item Name QTY RFQ Q62702Z829Z Eads Deutschland Gmbh Verteidig semiconductor device diode Avl RFQ IN935 International Rectifier Corporation semiconductor device diode Avl RFQ FBMZ103 Veeco Instruments semiconductor device diode Avl RFQ 947060-9352 Litton Systems Inc semiconductor device diode Avl RFQ 848121-0001 Thales Communications Inc semiconductor device diode Avl RFQ 6083-1026 Genrad Inc semiconductor device diode Avl RFQ 5961PL0808535 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 5961009903049 Eca Etablissement Central Des semiconductor device diode Avl RFQ 585F311PC24 Westinghouse Electric Corp semiconductor device diode Avl RFQ 570167-3 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 50540198 Gte Products Corp semiconductor device diode Avl RFQ 5039-192 Raytheon Aircraft semiconductor device diode Avl RFQ 442978 Raytheon Technical Services Company semiconductor device diode Avl RFQ 4178600-163 Raytheon Aircraft semiconductor device diode Avl RFQ 353-3157-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 2835-541 Gte Communication Systems Corp semiconductor device diode Avl RFQ 28305-4 Tyco Electronics semiconductor device diode Avl RFQ 1N935BA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N935A International Rectifier Corporation semiconductor device diode Avl RFQ 1N935A Joint Electronics Type Designation Systemes semiconductor device diode Avl RFQ 1N935A Microsemi Corporation semiconductor device diode Avl RFQ 1N935 Electronic Industries Association semiconductor device diode Avl RFQ 1N935 Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N935 Texas Instrument Inc semiconductor device diode Avl RFQ 176140-001 Bae Systems semiconductor device diode Avl RFQ 176140-000 Bae Systems semiconductor device diode Avl RFQ 107006 Systron Donner Corp semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961009903049MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/156 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/156 GOVERNMENT SPECIFICATION |