NSN 5961-00-997-9441 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961009979441 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 009979441 |
| NCB Code: USA (00) |
| Manufacturers: Texas Instrument Inc , Micro Uspd Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers PG316-2B, PG316-2A under NSN 5961-00-997-9441 of Semiconductor Device Diode manufactured by Texas Instrument Inc, Micro Uspd Inc.
Federal Supply Class of NSN 5961-00-997-9441 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-997-9441, 5961009979441
Characteristics Data of NSN 5961009979441MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.220 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.085 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.085 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 75.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 225.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER AND 75.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.220 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.085 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 225.00 MILLIAMPERES SOURCE CUTOFF CURRENT OUTSIDE DIAMETER AND 75.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |