NSN 5961-01-005-2210 of Transistor - Parts Details
| Alternative NSN: 5961010052210 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010052210 |
| NCB Code: USA (01) |
| Manufacturers: Telcom Semiconductor Inc , Texas Instrument Inc , Emerson Electric Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers U2061E, U1826E, 100-729-00, 100-723-00 under NSN 5961-01-005-2210 of Transistor manufactured by Telcom Semiconductor Inc, Texas Instrument Inc, Emerson Electric Co.
Federal Supply Class of NSN 5961-01-005-2210 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-005-2210, 5961010052210
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Part No Manufacturer Item Name QTY RFQ U2061E Telcom Semiconductor Inc transistor Avl RFQ U2061E Texas Instrument Inc transistor Avl RFQ U1826E Telcom Semiconductor Inc transistor Avl RFQ 100-729-00 Emerson Electric Co transistor Avl RFQ 100-723-00 Emerson Electric Co transistor Avl RFQ
Characteristics Data of NSN 5961010052210MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.210 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 20.0 MAXIMUM DRAIN TO GATE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 1.00 MILLIAMPERES MAXIMUM DRAIN CURRENT TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |