NSN 5961-01-012-9313 of Transistor - Parts Details
Alternative NSN: 5961010129313 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 010129313 |
NCB Code: USA (01) |
Manufacturers: Telcom Semiconductor Inc , Fluke Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2N5078, 343101, 343103, U 2547 E under NSN 5961-01-012-9313 of Transistor manufactured by Telcom Semiconductor Inc, Fluke Corporation.
Federal Supply Class of NSN 5961-01-012-9313 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-012-9313, 5961010129313
Characteristics Data of NSN 5961010129313MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.240 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.222 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.240 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.222 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |