NSN 5961-01-023-9961 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961010239961 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010239961 |
| NCB Code: USA (01) |
| Manufacturers: Freescale Semiconductor Inc , On Semiconductors , Fairchild Semiconductor Corp , Siemens Corp , Microsemi Corporation , Telcom Semiconductor Inc , Avago Technologies Us Inc Division , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SZ30016-207, SZ10939-205, SZ 10939-207, FZ7468, DZ731008J under NSN 5961-01-023-9961 of Semiconductor Device Diode manufactured by Freescale Semiconductor Inc, On Semiconductors, Fairchild Semiconductor Corp, Siemens Corp, Microsemi Corporation.
Federal Supply Class of NSN 5961-01-023-9961 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-023-9961, 5961010239961
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Part No Manufacturer Item Name QTY RFQ SZ30016-207 Freescale Semiconductor Inc semiconductor device diode Avl RFQ SZ30016-207 On Semiconductors semiconductor device diode Avl RFQ SZ10939-205 Freescale Semiconductor Inc semiconductor device diode Avl RFQ SZ 10939-207 Freescale Semiconductor Inc semiconductor device diode Avl RFQ FZ7468 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ DZ731008J Siemens Corp semiconductor device diode Avl RFQ DZ731008J Microsemi Corporation semiconductor device diode Avl RFQ CD 35731 Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1902-3183 Avago Technologies Us Inc Division semiconductor device diode Avl RFQ 1902-3183 Hewlett Packard Co semiconductor device diode Avl RFQ 1902-3181 Hewlett Packard Co semiconductor device diode Avl RFQ 1902-3181 Avago Technologies Us Inc Division semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961010239961MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.107 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.300 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 12.1 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 100.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MINOR CTRD POWER RATING PER CHARACTERISTIC 0.4 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.107 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.300 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.1 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MINOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 0.4 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |