NSN 5961-01-023-9965 of Semiconductor Device Diode - Parts Details
Alternative NSN: 5961010239965 |
Item Name: Semiconductor Device Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 010239965 |
NCB Code: USA (01) |
Manufacturers: Electronic Industries Association , Thales Communications Inc , Freescale Semiconductor Inc , General Semiconductor Inc , Semiconductor Components Industrial , Raytheon Technical Services Company , L 3 Communications |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE6479, JEDEC1N5908, 246148-0001, 1N5908, 1003593-01 under NSN 5961-01-023-9965 of Semiconductor Device Diode manufactured by Electronic Industries Association, Thales Communications Inc, Freescale Semiconductor Inc, General Semiconductor Inc, Semiconductor Components Industrial.
Federal Supply Class of NSN 5961-01-023-9965 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-023-9965, 5961010239965
-
Part No Manufacturer Item Name QTY RFQ RELEASE6479 Electronic Industries Association semiconductor device diode Avl RFQ JEDEC1N5908 Electronic Industries Association semiconductor device diode Avl RFQ 246148-0001 Thales Communications Inc semiconductor device diode Avl RFQ 1N5908 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N5908 General Semiconductor Inc semiconductor device diode Avl RFQ 1N5908 Electronic Industries Association semiconductor device diode Avl RFQ 1N5908 Semiconductor Components Industrial semiconductor device diode Avl RFQ 1003593-01 Raytheon Technical Services Company semiconductor device diode Avl RFQ 1003593-01 L 3 Communications semiconductor device diode Avl RFQ 1003593 Raytheon Technical Services Company semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961010239965MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.380 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.100 INCHES MINIMUM ADAV OVERALL DIAMETER 0.205 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED CTQX CURRENT RATING PER CHARACTERISTIC 700.00 MILLIAMPERES FORWARD CURRENT, AVERAGE PEAK CTRD POWER RATING PER CHARACTERISTIC 5.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER PEAK TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.380 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.100 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.205 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED |
CTQX | CURRENT RATING PER CHARACTERISTIC | 700.00 MILLIAMPERES FORWARD CURRENT, AVERAGE PEAK |
CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER PEAK |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |