NSN 5961-01-030-8676 of Transistor - Parts Details
Alternative NSN: 5961010308676 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 010308676 |
NCB Code: USA (01) |
Manufacturers: Electronic Industries Association , British Sarozal Ltd , Siliconix Incorporated Div Silic , Thales Nederland |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2N6661, 3522 500 29252, 3522 500 42598, RELEASE 6675D, VMP-22 under NSN 5961-01-030-8676 of Transistor manufactured by Electronic Industries Association, British Sarozal Ltd, Siliconix Incorporated Div Silic, Thales Nederland.
Federal Supply Class of NSN 5961-01-030-8676 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-030-8676, 5961010308676
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Part No Manufacturer Item Name QTY RFQ 2N6661 Electronic Industries Association transistor Avl RFQ 2N6661 British Sarozal Ltd transistor Avl RFQ 2N6661 Siliconix Incorporated Div Silic transistor Avl RFQ 3522 500 29252 Thales Nederland transistor Avl RFQ 3522 500 42598 Thales Nederland transistor Avl RFQ RELEASE 6675D Electronic Industries Association transistor Avl RFQ VMP-22 Siliconix Incorporated Div Silic transistor Avl RFQ
Characteristics Data of NSN 5961010308676MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.360 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 90.0 MAXIMUM DRAIN TO GATE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 1.50 AMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 4.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.360 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 90.0 MAXIMUM DRAIN TO GATE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.50 AMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 4.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |