NSN 5961-01-031-1209 of Transistor - Parts Details
Alternative NSN: 5961010311209 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 010311209 |
NCB Code: USA (01) |
Manufacturers: Navair Ltd , Raytheon Aircraft , Raytheon Technical Services Company , Solitron Devices Inc , Fairchild Semiconductor Corp , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2887389-2, F2396, H33925, SFC4197 under NSN 5961-01-031-1209 of Transistor manufactured by Navair Ltd, Raytheon Aircraft, Raytheon Technical Services Company, Solitron Devices Inc, Fairchild Semiconductor Corp.
Federal Supply Class of NSN 5961-01-031-1209 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-031-1209, 5961010311209
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Part No Manufacturer Item Name QTY RFQ 2887389-2 Navair Ltd transistor Avl RFQ 2887389-2 Raytheon Aircraft transistor Avl RFQ 2887389-2 Raytheon Technical Services Company transistor Avl RFQ F2396 Solitron Devices Inc transistor Avl RFQ H33925 Fairchild Semiconductor Corp transistor Avl RFQ SFC4197 Texas Instrument Inc transistor Avl RFQ
Characteristics Data of NSN 5961010311209MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -10.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 150.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, DC CTRD POWER RATING PER CHARACTERISTIC 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TEST TEST DATA DOCUMENT 10001-2887389 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -10.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 150.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, DC |
CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
TEST | TEST DATA DOCUMENT | 10001-2887389 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |