NSN 5961-01-035-8543 of Semiconductor Devices Unitized - Parts Details
Alternative NSN: 5961010358543 |
Item Name: Semiconductor Devices Unitized |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 010358543 |
NCB Code: USA (01) |
Manufacturers: Intersil Corporation , Siliconix Incorporated Div Silic , Hewlett Packard Co , Avago Technologies Us Inc Division |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ITS30623, DN1481, 1855-0234 under NSN 5961-01-035-8543 of Semiconductor Devices Unitized manufactured by Intersil Corporation, Siliconix Incorporated Div Silic, Hewlett Packard Co, Avago Technologies Us Inc Division.
Federal Supply Class of NSN 5961-01-035-8543 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-035-8543, 5961010358543
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Part No Manufacturer Item Name QTY RFQ ITS30623 Intersil Corporation semiconductor devices unitized Avl RFQ DN1481 Siliconix Incorporated Div Silic semiconductor devices unitized Avl RFQ 1855-0234 Hewlett Packard Co semiconductor devices unitized Avl RFQ 1855-0234 Avago Technologies Us Inc Division semiconductor devices unitized Avl RFQ
Characteristics Data of NSN 5961010358543MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-71 ASKA COMPONENT NAME AND QUANTITY 2 TRANSISTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR AND -40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS ALL TRANSISTOR CTQX CURRENT RATING PER CHARACTERISTIC 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR TTQY TERMINAL TYPE AND QUANTITY 8 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-71 |
ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR AND -40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS ALL TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR |
CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |