NSN 5961-01-038-0812 of Semiconductor Device Set - Parts Details
| Alternative NSN: 5961010380812 |
| Item Name: Semiconductor Device Set |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010380812 |
| NCB Code: USA (01) |
| Manufacturers: Gilbert Engineering Co Inc Incon , Telcom Semiconductor Inc , Fluke Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers S2095G, CD6734, 4805-152918, 152918 under NSN 5961-01-038-0812 of Semiconductor Device Set manufactured by Gilbert Engineering Co Inc Incon, Telcom Semiconductor Inc, Fluke Corporation.
Federal Supply Class of NSN 5961-01-038-0812 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-038-0812, 5961010380812
Characteristics Data of NSN 5961010380812MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ALL SEMICONDUCTOR DEVICE DIODE ABHP OVERALL LENGTH 0.300 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE ADAV OVERALL DIAMETER 0.092 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.104 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE ASCQ INTERNAL JUNCTION CONFIGURATION PN ALL SEMICONDUCTOR DEVICE DIODE ASDD COMPONENT FUNCTION RELATIONSHIP MATCHED ASKA COMPONENT NAME AND QUANTITY 2 SEMICONDUCTOR DEVICE DIODE AXGY MOUNTING METHOD TERMINAL ALL SEMICONDUCTOR DEVICE DIODE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON ALL SEMICONDUCTOR DEVICE DIODE CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 5.0 MINIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE CTRD POWER RATING PER CHARACTERISTIC 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.300 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.092 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.104 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MINIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |