NSN 5961-01-058-7804 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961010587804 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010587804 |
| NCB Code: USA (01) |
| Manufacturers: Hamilton Sundstrand Corporation , Thales Nederland , Selex Galileo Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 56599-2, 352250022991, 28471-46011 under NSN 5961-01-058-7804 of Semiconductor Device Diode manufactured by Hamilton Sundstrand Corporation, Thales Nederland, Selex Galileo Ltd.
Federal Supply Class of NSN 5961-01-058-7804 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-058-7804, 5961010587804
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Part No Manufacturer Item Name QTY RFQ 56599-2 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 352250022991 Thales Nederland semiconductor device diode Avl RFQ 28471-46011 Selex Galileo Ltd semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961010587804MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED TRANSIENT SUPPRESSOR ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-13 ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE CATHODE AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 18.0 NOMINAL BREAKDOWN VOLTAGE, DC AND 15.3 NOMINAL WORKING PEAK REVERSE VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR FEAT SPECIAL FEATURES 1.0W RATED AVERAGE POWER DISSIPATION; 1500W REPETETIVE PEAK PULSE POWER. TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-13 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 18.0 NOMINAL BREAKDOWN VOLTAGE, DC AND 15.3 NOMINAL WORKING PEAK REVERSE VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| FEAT | SPECIAL FEATURES | 1.0W RATED AVERAGE POWER DISSIPATION; 1500W REPETETIVE PEAK PULSE POWER. |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION |