NSN 5961-01-059-4035 of Transistor - Parts Details
| Alternative NSN: 5961010594035 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010594035 |
| NCB Code: USA (01) |
| Manufacturers: Telcom Semiconductor Inc , National Semiconductor Corp , Siliconix Incorporated Div Silic , Intersil Corporation , Solitron Devices Inc , Inspektorat Wsparcia Sil Zbrojnych , Fluke Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers U2806E, SF50060, J2069, ITS30348, F2692 under NSN 5961-01-059-4035 of Transistor manufactured by Telcom Semiconductor Inc, National Semiconductor Corp, Siliconix Incorporated Div Silic, Intersil Corporation, Solitron Devices Inc.
Federal Supply Class of NSN 5961-01-059-4035 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-059-4035, 5961010594035
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Part No Manufacturer Item Name QTY RFQ U2806E Telcom Semiconductor Inc transistor Avl RFQ SF50060 National Semiconductor Corp transistor Avl RFQ J2069 Siliconix Incorporated Div Silic transistor Avl RFQ ITS30348 Intersil Corporation transistor Avl RFQ F2692 Solitron Devices Inc transistor Avl RFQ 5961PL1253792 Inspektorat Wsparcia Sil Zbrojnych transistor Avl RFQ 357889 Fluke Corporation transistor Avl RFQ
Characteristics Data of NSN 5961010594035MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 20.0 NOMINAL GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 1.00 MILLIAMPERES NOMINAL DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES NOMINAL DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |