NSN 5961-01-065-8071 of Transistor - Parts Details
| Alternative NSN: 5961010658071 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010658071 |
| NCB Code: USA (01) |
| Manufacturers: Electronic Industries Association , Sypris Electronics Llc , Misco Inc , On Semiconductors , Texas Instrument Inc , Freescale Semiconductor Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5734, 522173, 2N3909A, 2N3909 under NSN 5961-01-065-8071 of Transistor manufactured by Electronic Industries Association, Sypris Electronics Llc, Misco Inc, On Semiconductors, Texas Instrument Inc.
Federal Supply Class of NSN 5961-01-065-8071 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-065-8071, 5961010658071
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Part No Manufacturer Item Name QTY RFQ RELEASE5734 Electronic Industries Association transistor Avl RFQ 522173 Sypris Electronics Llc transistor Avl RFQ 522173 Misco Inc transistor Avl RFQ 2N3909A On Semiconductors transistor Avl RFQ 2N3909A Texas Instrument Inc transistor Avl RFQ 2N3909A Electronic Industries Association transistor Avl RFQ 2N3909A Freescale Semiconductor Inc transistor Avl RFQ 2N3909 Freescale Semiconductor Inc transistor Avl RFQ
Characteristics Data of NSN 5961010658071MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.195 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.195 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |