NSN 5961-01-086-3249 of Transistor - Parts Details
| Alternative NSN: 5961010863249 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010863249 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , L 3 Communications |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SKA3784, 263-99-00659, 054-3-08-008-1 under NSN 5961-01-086-3249 of Transistor manufactured by Texas Instrument Inc, L 3 Communications.
Federal Supply Class of NSN 5961-01-086-3249 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-086-3249, 5961010863249
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Part No Manufacturer Item Name QTY RFQ SKA3784 Texas Instrument Inc transistor Avl RFQ 263-99-00659 L 3 Communications transistor Avl RFQ 054-3-08-008-1 L 3 Communications transistor Avl RFQ
Characteristics Data of NSN 5961010863249MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABKW OVERALL HEIGHT 0.165 INCHES MAXIMUM ABMK OVERALL WIDTH 0.205 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT-DUAL GATE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92 AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.165 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.205 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |