NSN 5961-01-096-8159 of Transistor - Parts Details
Alternative NSN: 5961010968159 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 010968159 |
NCB Code: USA (01) |
Manufacturers: Woodward Governor Company , Electronic Industries Association , Micro Uspd Inc , Supertex Inc , Eads Deutschland Gmbh Verteidig |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1686-637, 2N6660, 5800583-942210.101, RELEASE6675 under NSN 5961-01-096-8159 of Transistor manufactured by Woodward Governor Company, Electronic Industries Association, Micro Uspd Inc, Supertex Inc, Eads Deutschland Gmbh Verteidig.
Federal Supply Class of NSN 5961-01-096-8159 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-096-8159, 5961010968159
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Part No Manufacturer Item Name QTY RFQ 1686-637 Woodward Governor Company transistor Avl RFQ 2N6660 Electronic Industries Association transistor Avl RFQ 2N6660 Micro Uspd Inc transistor Avl RFQ 2N6660 Supertex Inc transistor Avl RFQ 5800583-942210.101 Eads Deutschland Gmbh Verteidig transistor Avl RFQ RELEASE6675 Electronic Industries Association transistor Avl RFQ
Characteristics Data of NSN 5961010968159MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.260 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.335 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT-DUAL GATE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-39 AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.210 INCHES MAXIMUM CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 15.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 2.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT AND 2.00 AMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 6.25 WATTS MAXIMUM TOTAL POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE6675 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.335 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.210 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 2.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT AND 2.00 AMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 6.25 WATTS MAXIMUM TOTAL POWER DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE6675 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |