NSN 5961-01-099-8429 of Transistor - Parts Details
Alternative NSN: 5961010998429 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 010998429 |
NCB Code: USA (01) |
Manufacturers: Thales Avionics , Freescale Semiconductor Inc , General Electric Company , International Rectifier Corporation , Siliconix Incorporated Div Silic , Stmicroelectronics Inc , Micro Uspd Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 99130294, IRF150, UFN150 under NSN 5961-01-099-8429 of Transistor manufactured by Thales Avionics, Freescale Semiconductor Inc, General Electric Company, International Rectifier Corporation, Siliconix Incorporated Div Silic.
Federal Supply Class of NSN 5961-01-099-8429 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-099-8429, 5961010998429
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Part No Manufacturer Item Name QTY RFQ 99130294 Thales Avionics transistor Avl RFQ IRF150 Freescale Semiconductor Inc transistor Avl RFQ IRF150 General Electric Company transistor Avl RFQ IRF150 International Rectifier Corporation transistor Avl RFQ IRF150 Siliconix Incorporated Div Silic transistor Avl RFQ IRF150 Stmicroelectronics Inc transistor Avl RFQ UFN150 Micro Uspd Inc transistor Avl RFQ
Characteristics Data of NSN 5961010998429MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 39.22 MILLIMETERS MAXIMUM ABKW OVERALL HEIGHT 8.38 MILLIMETERS MAXIMUM ABMK OVERALL WIDTH 25.80 MILLIMETERS MAXIMUM AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-204AE ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE DRAIN AXGY MOUNTING METHOD UNTHREADED HOLE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 30.00 AMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 180.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 1 CASE AND 2 PIN
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 39.22 MILLIMETERS MAXIMUM |
ABKW | OVERALL HEIGHT | 8.38 MILLIMETERS MAXIMUM |
ABMK | OVERALL WIDTH | 25.80 MILLIMETERS MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-204AE |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 AMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 180.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |