NSN 5961-01-099-9148 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961010999148 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010999148 |
| NCB Code: USA (01) |
| Manufacturers: Gilbert Engineering Co Inc Incon , Bae Systems , Selex Galileo Ltd , Freescale Semiconductor Inc , Wayne Kerr Electronics Inc , Power Designs Inc , Inspektorat Wsparcia Sil Zbrojnych , Rockwell Collins Inc , Trw Electronic Components Division , C O D I Corp , Superior Electric Holding Group , Microsemi Corporation , Ampex Data Systems Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TS825G1, TS825F, K5057, K3919, JAN1N825 under NSN 5961-01-099-9148 of Semiconductor Device Diode manufactured by Gilbert Engineering Co Inc Incon, Bae Systems, Selex Galileo Ltd, Freescale Semiconductor Inc, Wayne Kerr Electronics Inc.
Federal Supply Class of NSN 5961-01-099-9148 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-099-9148, 5961010999148
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Part No Manufacturer Item Name QTY RFQ TS825G1 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ TS825F Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ K5057 Bae Systems semiconductor device diode Avl RFQ K3919 Selex Galileo Ltd semiconductor device diode Avl RFQ JAN1N825 Freescale Semiconductor Inc semiconductor device diode Avl RFQ DZ16V20D3 Wayne Kerr Electronics Inc semiconductor device diode Avl RFQ B65533-7A Power Designs Inc semiconductor device diode Avl RFQ B65533-7-1 Power Designs Inc semiconductor device diode Avl RFQ B65533-6 Power Designs Inc semiconductor device diode Avl RFQ 5961PL0911105 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 353-9016-110 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-3625-011 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-3625-011 Trw Electronic Components Division semiconductor device diode Avl RFQ 353-3625-011 C O D I Corp semiconductor device diode Avl RFQ 202642 PC 108 Superior Electric Holding Group semiconductor device diode Avl RFQ 201670 PC 108 Superior Electric Holding Group semiconductor device diode Avl RFQ 1N825A Microsemi Corporation semiconductor device diode Avl RFQ 1N825 Microsemi Corporation semiconductor device diode Avl RFQ 1N825 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N825 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 013-202 Ampex Data Systems Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961010999148MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 70.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION |