NSN 5961-01-110-0668 of Transistor - Parts Details
| Alternative NSN: 5961011100668 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011100668 |
| NCB Code: USA (01) |
| Manufacturers: California Eastern Labs , Nippon Electric Company Ltd , Cardion Inc , Paeaeesikunta Logistiikkaosasto , Target Corp , Rohde And Schwarz Inc , Itt Cannon , Selex Systems Integration Inc Di |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers NE02135C, NE02135, NE0-2135, 411-2526, 405712 under NSN 5961-01-110-0668 of Transistor manufactured by California Eastern Labs, Nippon Electric Company Ltd, Cardion Inc, Paeaeesikunta Logistiikkaosasto, Target Corp.
Federal Supply Class of NSN 5961-01-110-0668 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-110-0668, 5961011100668
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Part No Manufacturer Item Name QTY RFQ NE02135C California Eastern Labs transistor Avl RFQ NE02135 Nippon Electric Company Ltd transistor Avl RFQ NE0-2135 Cardion Inc transistor Avl RFQ 411-2526 Paeaeesikunta Logistiikkaosasto transistor Avl RFQ 405712 Target Corp transistor Avl RFQ 405712 Cardion Inc transistor Avl RFQ 3006147 Rohde And Schwarz Inc transistor Avl RFQ 2139774G001 Itt Cannon transistor Avl RFQ 162517-0000 Selex Systems Integration Inc Di transistor Avl RFQ
Characteristics Data of NSN 5961011100668MRC Criteria Characteristic ABBH INCLOSURE MATERIAL CERAMIC ABHP OVERALL LENGTH 1.8 MILLIMETERS MAXIMUM ADAV OVERALL DIAMETER 2.1 MILLIMETERS NOMINAL AXGY MOUNTING METHOD PRESS FIT CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN CTQX CURRENT RATING PER CHARACTERISTIC 70.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 290.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTRK TRANSFER RATIO 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 4 RIBBON
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC |
| ABHP | OVERALL LENGTH | 1.8 MILLIMETERS MAXIMUM |
| ADAV | OVERALL DIAMETER | 2.1 MILLIMETERS NOMINAL |
| AXGY | MOUNTING METHOD | PRESS FIT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 290.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTRK | TRANSFER RATIO | 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 RIBBON |