NSN 5961-01-143-4999 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961011434999 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011434999 |
| NCB Code: USA (01) |
| Manufacturers: L 3 Communications , Harris Corporation , Philips Circuit Assemblies , Philips Semiconductors Inc , British Sarozal Ltd , Tektronix Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VHE1402, D22-0017-000, BYW29-100, BYW29 100, 152-0720-00 under NSN 5961-01-143-4999 of Semiconductor Device Diode manufactured by L 3 Communications, Harris Corporation, Philips Circuit Assemblies, Philips Semiconductors Inc, British Sarozal Ltd.
Federal Supply Class of NSN 5961-01-143-4999 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-143-4999, 5961011434999
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Part No Manufacturer Item Name QTY RFQ VHE1402 L 3 Communications semiconductor device diode Avl RFQ D22-0017-000 Harris Corporation semiconductor device diode Avl RFQ BYW29-100 Philips Circuit Assemblies semiconductor device diode Avl RFQ BYW29-100 Philips Semiconductors Inc semiconductor device diode Avl RFQ BYW29 100 British Sarozal Ltd semiconductor device diode Avl RFQ 152-0720-00 Tektronix Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961011434999MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 21.700 INCHES MAXIMUM ABJT TERMINAL LENGTH 7.600 INCHES MAXIMUM ABKW OVERALL HEIGHT 4.500 INCHES MAXIMUM ABMK OVERALL WIDTH 10.300 INCHES MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-220 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 7.00 AMPERES SOURCE CUTOFF CURRENT PRESET AND 12.00 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM OF STANDARD RANGE AND 80.00 AMPERES SOURCE CUTOFF CURRENT ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 21.700 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 7.600 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 4.500 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 10.300 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 7.00 AMPERES SOURCE CUTOFF CURRENT PRESET AND 12.00 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM OF STANDARD RANGE AND 80.00 AMPERES SOURCE CUTOFF CURRENT ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |