NSN 5961-01-162-4615 of Transistor - Parts Details
| Alternative NSN: 5961011624615 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011624615 |
| NCB Code: USA (01) |
| Manufacturers: Siliconix Incorporated Div Silic , Computer Sciences Corporation , International Rectifier Corporation , Freescale Semiconductor Inc , Aai Corporation , Rockwell Collins Inc , Electronic Industries Association |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers V11563, IRF232, IRF231, IRF230, 58139-91047 under NSN 5961-01-162-4615 of Transistor manufactured by Siliconix Incorporated Div Silic, Computer Sciences Corporation, International Rectifier Corporation, Freescale Semiconductor Inc, Aai Corporation.
Federal Supply Class of NSN 5961-01-162-4615 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-162-4615, 5961011624615
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Part No Manufacturer Item Name QTY RFQ V11563 Siliconix Incorporated Div Silic transistor Avl RFQ IRF232 Computer Sciences Corporation transistor Avl RFQ IRF231 International Rectifier Corporation transistor Avl RFQ IRF230 International Rectifier Corporation transistor Avl RFQ IRF230 Freescale Semiconductor Inc transistor Avl RFQ 58139-91047 Aai Corporation transistor Avl RFQ 43 948-001 Rockwell Collins Inc transistor Avl RFQ 2N6797 Electronic Industries Association transistor Avl RFQ
Characteristics Data of NSN 5961011624615MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 1.573 INCHES NOMINAL ABKW OVERALL HEIGHT 0.450 INCHES MAXIMUM ABMK OVERALL WIDTH 1.050 INCHES MAXIMUM AGAV III END ITEM IDENTIFICATION 6625-01-022-5859 AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION FIELD EFFECT-DUAL GATE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-3 ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE DRAIN AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 9.00 AMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 PIN AND 1 CASE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 1.573 INCHES NOMINAL |
| ABKW | OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| AGAV | III END ITEM IDENTIFICATION | 6625-01-022-5859 |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 9.00 AMPERES MAXIMUM DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |