NSN 5961-01-206-3973 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961012063973 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012063973 |
| NCB Code: USA (01) |
| Manufacturers: Freescale Semiconductor Inc , Dla Land And Maritime , Harris Corporation , Fairchild Semiconductor Corp , Texas Instrument Inc , Microsemi Corporation , Rockwell Collins Inc , Thales Underwater Systems Sas , Nai Technologies Inc , Systron Donner Corp , Hamilton Sundstrand Corporation , Control Data Corp , Boeing Company , Honeywell Inc , Raytheon Aircraft , Honeywell International Inc , Interstate Electronics Corporation , Sypris Electronics Llc , Lucent Technologies Inc , Bae Systems , General Semiconductor Inc , Gilbert Engineering Co Inc Incon , International Rectifier Corporation , Joint Electronics Type Designation Systemes , Telcom Semiconductor Inc , Diodes Inc , Paeaeesikunta Logistiikkaosasto |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SZG30795H, SZ10939-122, L00951, JAN1N753A, IN753A under NSN 5961-01-206-3973 of Semiconductor Device Diode manufactured by Freescale Semiconductor Inc, Dla Land And Maritime, Harris Corporation, Fairchild Semiconductor Corp, Texas Instrument Inc.
Federal Supply Class of NSN 5961-01-206-3973 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-206-3973, 5961012063973
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Part No Manufacturer Item Name QTY RFQ SZG30795H Freescale Semiconductor Inc semiconductor device diode Avl RFQ SZ10939-122 Freescale Semiconductor Inc semiconductor device diode Avl RFQ L00951 Dla Land And Maritime semiconductor device diode Avl RFQ JAN1N753A Harris Corporation semiconductor device diode Avl RFQ JAN1N753A Fairchild Semiconductor Corp semiconductor device diode Avl RFQ IN753A Freescale Semiconductor Inc semiconductor device diode Avl RFQ IN753 Texas Instrument Inc semiconductor device diode Avl RFQ DZ840810A Microsemi Corporation semiconductor device diode Avl RFQ 995-9502-026 Rockwell Collins Inc semiconductor device diode Avl RFQ 99194916 Thales Underwater Systems Sas semiconductor device diode Avl RFQ 803384 Nai Technologies Inc semiconductor device diode Avl RFQ 720192 Systron Donner Corp semiconductor device diode Avl RFQ 5E4820 51-1011 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 50240108 Control Data Corp semiconductor device diode Avl RFQ 479-1503-002 Boeing Company semiconductor device diode Avl RFQ 479-1503-001 Boeing Company semiconductor device diode Avl RFQ 43B134446P086 Honeywell Inc semiconductor device diode Avl RFQ 43A134446P086 Honeywell Inc semiconductor device diode Avl RFQ 418715-59 Raytheon Aircraft semiconductor device diode Avl RFQ 4178601-89 Raytheon Aircraft semiconductor device diode Avl RFQ 4037937-508 Honeywell International Inc semiconductor device diode Avl RFQ 353-2980-002 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-2980-00 Rockwell Collins Inc semiconductor device diode Avl RFQ 353 2980 000 Boeing Company semiconductor device diode Avl RFQ 343-222-017 Interstate Electronics Corporation semiconductor device diode Avl RFQ 215472-0022 Sypris Electronics Llc semiconductor device diode Avl RFQ 215472-0022 Lucent Technologies Inc semiconductor device diode Avl RFQ 200441-022 Bae Systems semiconductor device diode Avl RFQ 20-01284-027 Raytheon Aircraft semiconductor device diode Avl RFQ 1N753B General Semiconductor Inc semiconductor device diode Avl RFQ 1N753B Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N753B Texas Instrument Inc semiconductor device diode Avl RFQ 1N753B Microsemi Corporation semiconductor device diode Avl RFQ 1N753A1 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N753A Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 1N753A International Rectifier Corporation semiconductor device diode Avl RFQ 1N753A Joint Electronics Type Designation Systemes semiconductor device diode Avl RFQ 1N753 Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N753 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N753 Diodes Inc semiconductor device diode Avl RFQ 1N753 Joint Electronics Type Designation Systemes semiconductor device diode Avl RFQ 1MN53A Texas Instrument Inc semiconductor device diode Avl RFQ 10129860 Paeaeesikunta Logistiikkaosasto semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961012063973MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 65.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 65.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |