NSN 5961-01-216-7269 of Semiconductor Device Diode - Parts Details
Alternative NSN: 5961012167269 |
Item Name: Semiconductor Device Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 012167269 |
NCB Code: USA (01) |
Manufacturers: Hitachi America Ltd , Kikusui Intl Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ISS86-SB, 32-30-0860 under NSN 5961-01-216-7269 of Semiconductor Device Diode manufactured by Hitachi America Ltd, Kikusui Intl Corp.
Federal Supply Class of NSN 5961-01-216-7269 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-216-7269, 5961012167269
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Part No Manufacturer Item Name QTY RFQ ISS86-SB Hitachi America Ltd semiconductor device diode Avl RFQ 32-30-0860 Kikusui Intl Corp semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961012167269MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 4.2 MILLIMETERS MAXIMUM ABJT TERMINAL LENGTH 26.0 MILLIMETERS MINIMUM ADAV OVERALL DIAMETER 2.0 MILLIMETERS MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 3.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC CTQX CURRENT RATING PER CHARACTERISTIC 30.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 4.2 MILLIMETERS MAXIMUM |
ABJT | TERMINAL LENGTH | 26.0 MILLIMETERS MINIMUM |
ADAV | OVERALL DIAMETER | 2.0 MILLIMETERS MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC |
CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |