NSN 5961-01-268-4572 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961012684572 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012684572 |
| NCB Code: USA (01) |
| Manufacturers: Tyco Electronics , National Semiconductor Corp , Fairchild Semiconductor Corp , Semiconductor Components Industrial , Dla Land And Maritime , E2v Inc , Rsm Electron Power Inc , Stmicroelectronics Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers WM947371 2 3 316 ITEM 5, WM947371 2 3 316 5, BZX55C10 under NSN 5961-01-268-4572 of Semiconductor Device Diode manufactured by Tyco Electronics, National Semiconductor Corp, Fairchild Semiconductor Corp, Semiconductor Components Industrial, Dla Land And Maritime.
Federal Supply Class of NSN 5961-01-268-4572 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-268-4572, 5961012684572
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Part No Manufacturer Item Name QTY RFQ WM947371 2 3 316 ITEM 5 Tyco Electronics semiconductor device diode Avl RFQ WM947371 2 3 316 5 Tyco Electronics semiconductor device diode Avl RFQ BZX55C10 National Semiconductor Corp semiconductor device diode Avl RFQ BZX55C10 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ BZX55C10 Semiconductor Components Industrial semiconductor device diode Avl RFQ BZX55C10 Dla Land And Maritime semiconductor device diode Avl RFQ BZX55C10 E2v Inc semiconductor device diode Avl RFQ BZX55C10 Rsm Electron Power Inc semiconductor device diode Avl RFQ BZX55C10 Stmicroelectronics Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961012684572MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.090 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED VOLTAGE REFERENCE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION D0-35 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 5.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REFERENCE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | D0-35 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |