NSN 5961-01-287-0697 of Semiconductor Device Set - Parts Details
| Alternative NSN: 5961012870697 |
| Item Name: Semiconductor Device Set |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012870697 |
| NCB Code: USA (01) |
| Manufacturers: Micro Uspd Inc , Microsemi Corporation , Raytheon Aircraft , Fairchild Semiconductor Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers NDX1146, MT5267, MC510376, 2692108-1, 1N4938-1 under NSN 5961-01-287-0697 of Semiconductor Device Set manufactured by Micro Uspd Inc, Microsemi Corporation, Raytheon Aircraft, Fairchild Semiconductor Corp.
Federal Supply Class of NSN 5961-01-287-0697 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-287-0697, 5961012870697
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Part No Manufacturer Item Name QTY RFQ NDX1146 Micro Uspd Inc semiconductor device set Avl RFQ MT5267 Microsemi Corporation semiconductor device set Avl RFQ MC510376 Microsemi Corporation semiconductor device set Avl RFQ 2692108-1 Raytheon Aircraft semiconductor device set Avl RFQ 1N4938-1 Fairchild Semiconductor Corp semiconductor device set Avl RFQ
Characteristics Data of NSN 5961012870697MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.180 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.074 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR ASCQ INTERNAL JUNCTION CONFIGURATION PN ALL SEMICONDUCTOR DEVICE DIODE ASDD COMPONENT FUNCTION RELATIONSHIP MATCHED ASKA COMPONENT NAME AND QUANTITY 4 SEMICONDUCTOR DEVICE DIODE AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON ALL SEMICONDUCTOR DEVICE DIODE CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE CTQX CURRENT RATING PER CHARACTERISTIC 30.00 MILLIAMPERES FORWARD CURRENT, AVERAGE PEAK ALL SEMICONDUCTOR DEVICE DIODE TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.074 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES FORWARD CURRENT, AVERAGE PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |