NSN 5961-01-306-1913 of Transistor - Parts Details
Alternative NSN: 5961013061913 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 013061913 |
NCB Code: USA (01) |
Manufacturers: International Rectifier Corporation , Vishay Ltd , Vishay Dale Electronics Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers IRF630, IFR630 under NSN 5961-01-306-1913 of Transistor manufactured by International Rectifier Corporation, Vishay Ltd, Vishay Dale Electronics Inc.
Federal Supply Class of NSN 5961-01-306-1913 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-306-1913, 5961013061913
Characteristics Data of NSN 5961013061913MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.600 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.530 INCHES MINIMUM ABKW OVERALL HEIGHT 0.180 INCHES MAXIMUM AKPV MOUNTING FACILITY QUANTITY 1 ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-220AB AXGY MOUNTING METHOD UNTHREADED HOLE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 NOMINAL DRAIN TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 9.00 AMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 74.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ABMK OVERALL WIDTH 0.415 INCHES MAXIMUM TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 0.600 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.530 INCHES MINIMUM |
ABKW | OVERALL HEIGHT | 0.180 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 9.00 AMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 74.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
ABMK | OVERALL WIDTH | 0.415 INCHES MAXIMUM |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |