NSN 5961-01-308-6337 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961013086337 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013086337 |
| NCB Code: USA (01) |
| Manufacturers: Freescale Semiconductor Inc , Microsemi Corporation , Avago Technologies Us Inc Division , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SZ30035-028, DZ790424B, 1902-0970 under NSN 5961-01-308-6337 of Semiconductor Device Diode manufactured by Freescale Semiconductor Inc, Microsemi Corporation, Avago Technologies Us Inc Division, Hewlett Packard Co.
Federal Supply Class of NSN 5961-01-308-6337 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-308-6337, 5961013086337
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Part No Manufacturer Item Name QTY RFQ SZ30035-028 Freescale Semiconductor Inc semiconductor device diode Avl RFQ DZ790424B Microsemi Corporation semiconductor device diode Avl RFQ 1902-0970 Avago Technologies Us Inc Division semiconductor device diode Avl RFQ 1902-0970 Hewlett Packard Co semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961013086337MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.200 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.107 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 33.0 MAXIMUM BREAKDOWN VOLTAGE, DC CTQX CURRENT RATING PER CHARACTERISTIC 5.00 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT BLANK CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ABJT TERMINAL LENGTH 1.000 INCHES MAXIMUM CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 33.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT BLANK |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MAXIMUM |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |