NSN 5961-01-321-8985 of Transistor - Parts Details
| Alternative NSN: 5961013218985 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013218985 |
| NCB Code: USA (01) |
| Manufacturers: Microsource Inc , International Rectifier Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TR7-00018-102, TR7-00018-002, TR7-00018-001, IRFJ120 under NSN 5961-01-321-8985 of Transistor manufactured by Microsource Inc, International Rectifier Corporation.
Federal Supply Class of NSN 5961-01-321-8985 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-321-8985, 5961013218985
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Part No Manufacturer Item Name QTY RFQ TR7-00018-102 Microsource Inc transistor Avl RFQ TR7-00018-002 Microsource Inc transistor Avl RFQ TR7-00018-001 Microsource Inc transistor Avl RFQ IRFJ120 International Rectifier Corporation transistor Avl RFQ
Characteristics Data of NSN 5961013218985MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 1.260 INCHES MAXIMUM ABKW OVERALL HEIGHT 0.340 INCHES MAXIMUM ABMK OVERALL WIDTH 0.700 INCHES MAXIMUM AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 8.00 AMPERES MAXIMUM DRAIN CURRENT AND 32.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK CTRD POWER RATING PER CHARACTERISTIC 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 PIN AND 1 CASE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-66
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 1.260 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.340 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.700 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 8.00 AMPERES MAXIMUM DRAIN CURRENT AND 32.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK |
| CTRD | POWER RATING PER CHARACTERISTIC | 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66 |