NSN 5961-01-326-7680 of Transistor - Parts Details
| Alternative NSN: 5961013267680 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013267680 |
| NCB Code: USA (01) |
| Manufacturers: On Semiconductors , Siliconix Incorporated Div Silic , Freescale Semiconductor Inc , Gdi Inc , Agilent Technologies Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VN0300L, 74197, 1855-0555 under NSN 5961-01-326-7680 of Transistor manufactured by On Semiconductors, Siliconix Incorporated Div Silic, Freescale Semiconductor Inc, Gdi Inc, Agilent Technologies Inc.
Federal Supply Class of NSN 5961-01-326-7680 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-326-7680, 5961013267680
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Part No Manufacturer Item Name QTY RFQ VN0300L On Semiconductors transistor Avl RFQ VN0300L Siliconix Incorporated Div Silic transistor Avl RFQ VN0300L Freescale Semiconductor Inc transistor Avl RFQ 74197 Gdi Inc transistor Avl RFQ 1855-0555 Agilent Technologies Inc transistor Avl RFQ 1855-0555 Hewlett Packard Co transistor Avl RFQ
Characteristics Data of NSN 5961013267680MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ABKW OVERALL HEIGHT 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM ABMK OVERALL WIDTH 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 100.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92 CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 100.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |