NSN 5961-01-333-8516 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961013338516 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013338516 |
| NCB Code: USA (01) |
| Manufacturers: Fairchild Semiconductor Corp , National Semiconductor Corp , Racal Communications Systems Ltd , Thales Communications Inc , Thales Uk Limited |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers BAY74, 924012 under NSN 5961-01-333-8516 of Semiconductor Device Diode manufactured by Fairchild Semiconductor Corp, National Semiconductor Corp, Racal Communications Systems Ltd, Thales Communications Inc, Thales Uk Limited.
Federal Supply Class of NSN 5961-01-333-8516 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-333-8516, 5961013338516
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Part No Manufacturer Item Name QTY RFQ BAY74 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ BAY74 National Semiconductor Corp semiconductor device diode Avl RFQ 924012 Racal Communications Systems Ltd semiconductor device diode Avl RFQ 924012 Thales Communications Inc semiconductor device diode Avl RFQ 924012 Thales Uk Limited semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961013338516MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.075 INCHES MINIMUM AND 0.080 INCHES MAXIMUM AGAV END ITEM IDENTIFICATION 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON CTQX CURRENT RATING PER CHARACTERISTIC 100.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE AND 300.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE CTRG CAPACITANCE RATING IN PICOFARADS 3.0 MAXIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 35.0 MAXIMUM REVERSE VOLTAGE, PEAK CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.075 INCHES MINIMUM AND 0.080 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE AND 300.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 3.0 MAXIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |