NSN 5961-01-357-4779 of Semiconductor Device Set - Parts Details
Alternative NSN: 5961013574779 |
Item Name: Semiconductor Device Set |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 013574779 |
NCB Code: USA (01) |
Manufacturers: Rockwell Collins Inc , Siemens Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 204-0175-012, BB409E7762 under NSN 5961-01-357-4779 of Semiconductor Device Set manufactured by Rockwell Collins Inc, Siemens Corp.
Federal Supply Class of NSN 5961-01-357-4779 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-357-4779, 5961013574779
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Part No Manufacturer Item Name QTY RFQ 204-0175-012 Rockwell Collins Inc semiconductor device set Avl RFQ BB409E7762 Siemens Corp semiconductor device set Avl RFQ
Characteristics Data of NSN 5961013574779MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ALL SEMICONDUCTOR DEVICE DIODE ABHP OVERALL LENGTH 0.175 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE ADAV OVERALL DIAMETER 0.075 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE ASCQ INTERNAL JUNCTION CONFIGURATION PN ALL SEMICONDUCTOR DEVICE DIODE ASDD COMPONENT FUNCTION RELATIONSHIP MATCHED ASKA COMPONENT NAME AND QUANTITY 82 SEMICONDUCTOR DEVICE DIODE AXGY MOUNTING METHOD TERMINAL ALL SEMICONDUCTOR DEVICE DIODE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE AND BURN IN CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE CTQX CURRENT RATING PER CHARACTERISTIC 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE AFZC FUNCTION FOR WHICH DESIGNED VOLTAGE VARIABLE CAPACITOR CTMZ SEMICONDUCTOR MATERIAL SILICON ALL SEMICONDUCTOR DEVICE DIODE
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.175 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.075 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 82 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND BURN IN |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE VARIABLE CAPACITOR |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |