NSN 5961-01-364-1223 of Transistor - Parts Details
Alternative NSN: 5961013641223 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 013641223 |
NCB Code: USA (01) |
Manufacturers: Raytheon Aircraft , Raytheon Technical Services Company , Siliconix Incorporated Div Silic , Zeus Industrial Products Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 848274-1, SD211DE-2 under NSN 5961-01-364-1223 of Transistor manufactured by Raytheon Aircraft, Raytheon Technical Services Company, Siliconix Incorporated Div Silic, Zeus Industrial Products Inc.
Federal Supply Class of NSN 5961-01-364-1223 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-364-1223, 5961013641223
Characteristics Data of NSN 5961013641223MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED SWITCHING AGAV END ITEM IDENTIFICATION RECEIVER ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING |
AGAV | END ITEM IDENTIFICATION | RECEIVER |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |