NSN 5961-01-364-2648 of Transistor - Parts Details
| Alternative NSN: 5961013642648 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013642648 |
| NCB Code: USA (01) |
| Manufacturers: Freescale Semiconductor Inc , Harris Corporation , Thales Communications Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SRF8009H, Q26-0026-001, MRF136, 048948-0001 under NSN 5961-01-364-2648 of Transistor manufactured by Freescale Semiconductor Inc, Harris Corporation, Thales Communications Inc.
Federal Supply Class of NSN 5961-01-364-2648 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-364-2648, 5961013642648
-
Part No Manufacturer Item Name QTY RFQ SRF8009H Freescale Semiconductor Inc transistor Avl RFQ Q26-0026-001 Harris Corporation transistor Avl RFQ MRF136 Freescale Semiconductor Inc transistor Avl RFQ 048948-0001 Thales Communications Inc transistor Avl RFQ
Characteristics Data of NSN 5961013642648MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM ABKW OVERALL HEIGHT 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM ABMK OVERALL WIDTH 0.720 INCHES MINIMUM AND 0.730 INCHES MAXIMUM AGAV END ITEM IDENTIFICATION E3-HAVEQUIKAN AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED ELECTROSTATIC SENSITIVE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 65.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 1.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 1.00 MICROAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE CTRD POWER RATING PER CHARACTERISTIC 55.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION PMLC PRECIOUS MATERIAL AND LOCATION TERMINAL SURFACES GOLD PRMT PRECIOUS MATERIAL GOLD TTQY TERMINAL TYPE AND QUANTITY 4 RIBBON
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.720 INCHES MINIMUM AND 0.730 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | E3-HAVEQUIKAN |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 1.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MICROAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE |
| CTRD | POWER RATING PER CHARACTERISTIC | 55.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 RIBBON |