NSN 5961-01-373-6452 of Transistor - Parts Details
Alternative NSN: 5961013736452 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 013736452 |
NCB Code: USA (01) |
Manufacturers: Philips Semiconductors Inc , Thales Communications Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers BFT46TRL, SS-32577 under NSN 5961-01-373-6452 of Transistor manufactured by Philips Semiconductors Inc, Thales Communications Inc.
Federal Supply Class of NSN 5961-01-373-6452 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-373-6452, 5961013736452
Characteristics Data of NSN 5961013736452MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 2.800 INCHES MINIMUM AND 3.000 INCHES MAXIMUM ABKW OVERALL HEIGHT 1.100 INCHES MAXIMUM ABMK OVERALL WIDTH 1.200 INCHES MINIMUM AND 1.400 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES NOMINAL DRAIN CURRENT AND 5.00 MILLIAMPERES NOMINAL GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 2.800 INCHES MINIMUM AND 3.000 INCHES MAXIMUM |
ABKW | OVERALL HEIGHT | 1.100 INCHES MAXIMUM |
ABMK | OVERALL WIDTH | 1.200 INCHES MINIMUM AND 1.400 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES NOMINAL DRAIN CURRENT AND 5.00 MILLIAMPERES NOMINAL GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |