NSN 5961-01-382-7607 of Semiconductor Device Diode - Parts Details
Alternative NSN: 5961013827607 |
Item Name: Semiconductor Device Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 013827607 |
NCB Code: USA (01) |
Manufacturers: Thales Uk Limited , Racal Survey Inc Div Of Racal Da , Alpha Industries Inc , Thales Communications Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 712948, SMV1400-86, SS-2400592-1 under NSN 5961-01-382-7607 of Semiconductor Device Diode manufactured by Thales Uk Limited, Racal Survey Inc Div Of Racal Da, Alpha Industries Inc, Thales Communications Inc.
Federal Supply Class of NSN 5961-01-382-7607 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-382-7607, 5961013827607
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Part No Manufacturer Item Name QTY RFQ 712948 Thales Uk Limited semiconductor device diode Avl RFQ 712948 Racal Survey Inc Div Of Racal Da semiconductor device diode Avl RFQ SMV1400-86 Alpha Industries Inc semiconductor device diode Avl RFQ SS-2400592-1 Thales Communications Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961013827607MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC" ABHP OVERALL LENGTH 0.110 INCHES MAXIMUM" ABKW OVERALL HEIGHT 0.047 INCHES MAXIMUM" AXGY MOUNTING METHOD TERMINAL" CTMZ SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS" CTRG CAPACITANCE RATING IN PICOFARADS 2.0 MINIMUM AND 22.0 MAXIMUM AND 12.0 NOMINAL" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION" TTQY TERMINAL TYPE AND QUANTITY 3 BONDING PAD" ABBH INCLOSURE MATERIAL PLASTIC" ABHP OVERALL LENGTH 0.110 INCHES MAXIMUM" ABKW OVERALL HEIGHT 0.047 INCHES MAXIMUM" AXGY MOUNTING METHOD TERMINAL" CTMZ SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS" CTRG CAPACITANCE RATING IN PICOFARADS 2.0 MINIMUM AND 22.0 MAXIMUM AND 12.0 NOMINAL" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION" TTQY TERMINAL TYPE AND QUANTITY 3 BONDING PAD"
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC" |
ABHP | OVERALL LENGTH | 0.110 INCHES MAXIMUM" |
ABKW | OVERALL HEIGHT | 0.047 INCHES MAXIMUM" |
AXGY | MOUNTING METHOD | TERMINAL" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS" |
CTRG | CAPACITANCE RATING IN PICOFARADS | 2.0 MINIMUM AND 22.0 MAXIMUM AND 12.0 NOMINAL" |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION" |
TTQY | TERMINAL TYPE AND QUANTITY | 3 BONDING PAD" |
ABBH | INCLOSURE MATERIAL | PLASTIC" |
ABHP | OVERALL LENGTH | 0.110 INCHES MAXIMUM" |
ABKW | OVERALL HEIGHT | 0.047 INCHES MAXIMUM" |
AXGY | MOUNTING METHOD | TERMINAL" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS" |
CTRG | CAPACITANCE RATING IN PICOFARADS | 2.0 MINIMUM AND 22.0 MAXIMUM AND 12.0 NOMINAL" |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION" |
TTQY | TERMINAL TYPE AND QUANTITY | 3 BONDING PAD" |