NSN 5961-01-414-8640 of Transistor - Parts Details
Alternative NSN: 5961014148640 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 014148640 |
NCB Code: USA (01) |
Manufacturers: Siliconix Incorporated Div Silic , Thales Avionics |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SST215T1, SST215, 91680811 under NSN 5961-01-414-8640 of Transistor manufactured by Siliconix Incorporated Div Silic, Thales Avionics.
Federal Supply Class of NSN 5961-01-414-8640 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-414-8640, 5961014148640
Characteristics Data of NSN 5961014148640MRC Criteria Characteristic CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS JUNCTION CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE ABHP OVERALL LENGTH 0.110 INCHES MINIMUM AND 0.122 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL ABKW OVERALL HEIGHT 0.033 INCHES MAXIMUM CTMZ SEMICONDUCTOR MATERIAL SILICON ABBH INCLOSURE MATERIAL PLASTIC ALAT (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE N-CHANNEL INSULATED GATE TYPE ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION SOT-143 CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT TTQY TERMINAL TYPE AND QUANTITY 4 PRINTED CIRCUIT CTRD POWER RATING PER CHARACTERISTIC 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
MRC | Criteria | Characteristic |
---|---|---|
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE |
ABHP | OVERALL LENGTH | 0.110 INCHES MINIMUM AND 0.122 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
ABKW | OVERALL HEIGHT | 0.033 INCHES MAXIMUM |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ABBH | INCLOSURE MATERIAL | PLASTIC |
ALAT | (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL INSULATED GATE TYPE |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT-143 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
TTQY | TERMINAL TYPE AND QUANTITY | 4 PRINTED CIRCUIT |
CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |