NSN 5961-01-433-8841 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961014338841 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 014338841 |
| NCB Code: USA (01) |
| Manufacturers: Skyworks Solutions Inc , Thales Avionics |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SMP1603-01, 91751301 under NSN 5961-01-433-8841 of Semiconductor Device Diode manufactured by Skyworks Solutions Inc, Thales Avionics.
Federal Supply Class of NSN 5961-01-433-8841 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-433-8841, 5961014338841
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Part No Manufacturer Item Name QTY RFQ SMP1603-01 Skyworks Solutions Inc semiconductor device diode Avl RFQ 91751301 Thales Avionics semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961014338841MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS" ABHP OVERALL LENGTH 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM" ABJT TERMINAL LENGTH 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM" AXGY MOUNTING METHOD TERMINAL" AYQS TERMINAL CIRCLE DIAMETER 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE" CTMZ SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS" CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK" CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS ANY ACCEPTABLE PRESET" CTRG CAPACITANCE RATING IN PICOFARADS 1.5 MAXIMUM" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR" TTQY TERMINAL TYPE AND QUANTITY 2 ELECTRON TUBE BASE" ABBH INCLOSURE MATERIAL GLASS" ABHP OVERALL LENGTH 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM" ABJT TERMINAL LENGTH 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM" AXGY MOUNTING METHOD TERMINAL" AYQS TERMINAL CIRCLE DIAMETER 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE" CTMZ SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS" CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK" CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS ANY ACCEPTABLE PRESET" CTRG CAPACITANCE RATING IN PICOFARADS 1.5 MAXIMUM" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR" TTQY TERMINAL TYPE AND QUANTITY 2 ELECTRON TUBE BASE"
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM" |
| ABJT | TERMINAL LENGTH | 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS ANY ACCEPTABLE PRESET" |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 1.5 MAXIMUM" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 ELECTRON TUBE BASE" |
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM" |
| ABJT | TERMINAL LENGTH | 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS ANY ACCEPTABLE PRESET" |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 1.5 MAXIMUM" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 ELECTRON TUBE BASE" |