NSN 5961-01-576-8761 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961015768761 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 015768761 |
| NCB Code: USA (01) |
| Manufacturers: On Semiconductors , Thales Avionics |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers MMSZ3V9, 99203249 under NSN 5961-01-576-8761 of Semiconductor Device Diode manufactured by On Semiconductors, Thales Avionics.
Federal Supply Class of NSN 5961-01-576-8761 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-576-8761, 5961015768761
Characteristics Data of NSN 5961015768761MRC Criteria Characteristic AFZC Function For Which Designed ZENER DIODE TTQY Terminal Type And Quantity 2 BONDING PAD AXGY Mounting Method TERMINAL CTRD Power Rating Per Characteristic 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ABKW Overall Height 1.1 MILLIMETERS NOMINAL MRC Decoded Requirement Clear Text Reply ABMK Overall Width 1.6 MILLIMETERS NOMINAL ABHP Overall Length 3.7 MILLIMETERS MINIMUM AND 3.9 MILLIMETERS MAXIMUM CTQN Voltage Rating In Volts Per Characteristic 3.9 BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN NANOAMPERES
| MRC | Criteria | Characteristic |
|---|---|---|
| AFZC | Function For Which Designed | ZENER DIODE |
| TTQY | Terminal Type And Quantity | 2 BONDING PAD |
| AXGY | Mounting Method | TERMINAL |
| CTRD | Power Rating Per Characteristic | 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| ABKW | Overall Height | 1.1 MILLIMETERS NOMINAL |
| MRC | Decoded Requirement | Clear Text Reply |
| ABMK | Overall Width | 1.6 MILLIMETERS NOMINAL |
| ABHP | Overall Length | 3.7 MILLIMETERS MINIMUM AND 3.9 MILLIMETERS MAXIMUM |
| CTQN | Voltage Rating In Volts Per Characteristic | 3.9 BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN NANOAMPERES |