NSN 5962-00-236-8114 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962002368114 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 002368114 |
| NCB Code: USA (00) |
| Manufacturers: Philips Semiconductors Inc , Advanced Micro Devices Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers S8285F, S8285A, N8285A, 920986-1 under NSN 5962-00-236-8114 of Microcircuit Memory manufactured by Philips Semiconductors Inc, Advanced Micro Devices Inc.
Federal Supply Class of NSN 5962-00-236-8114 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-00-236-8114, 5962002368114
-
Part No Manufacturer Item Name QTY RFQ S8285F Philips Semiconductors Inc microcircuit memory Avl RFQ S8285A Advanced Micro Devices Inc microcircuit memory Avl RFQ N8285A Philips Semiconductors Inc microcircuit memory Avl RFQ 920986-1 Advanced Micro Devices Inc microcircuit memory Avl RFQ 920986-1 Philips Semiconductors Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962002368114MRC Criteria Characteristic ADAQ BODY LENGTH 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM ADAU BODY HEIGHT 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 420.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND BIDIRECTIONAL AND FAST CARRY AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS AND RESETTABLE AND NEGATIVE EDGE TRIGGERED CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 6 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM TTQY TERMINAL TYPE AND QUANTITY 14 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 420.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND BIDIRECTIONAL AND FAST CARRY AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS AND RESETTABLE AND NEGATIVE EDGE TRIGGERED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |