NSN 5962-01-078-1814 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962010781814 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010781814 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Philips Semiconductors Inc , Dla Land And Maritime , Intersil Corporation , National Semiconductor Corp , Advanced Micro Devices Inc , Raytheon Aircraft , Selex Galileo Ltd , Thales Communications Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SN74S288J, S82S123F 883B, ROM PROM FAMILY 013, HM1-7603-8, DM54S288J 883 under NSN 5962-01-078-1814 of Microcircuit Memory manufactured by Texas Instrument Inc, Philips Semiconductors Inc, Dla Land And Maritime, Intersil Corporation, National Semiconductor Corp.
Federal Supply Class of NSN 5962-01-078-1814 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-078-1814, 5962010781814
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Part No Manufacturer Item Name QTY RFQ SN74S288J Texas Instrument Inc microcircuit memory Avl RFQ S82S123F 883B Philips Semiconductors Inc microcircuit memory Avl RFQ ROM PROM FAMILY 013 Dla Land And Maritime microcircuit memory Avl RFQ HM1-7603-8 Intersil Corporation microcircuit memory Avl RFQ DM54S288J 883 National Semiconductor Corp microcircuit memory Avl RFQ AM27S09DC Advanced Micro Devices Inc microcircuit memory Avl RFQ 803835-1 Raytheon Aircraft microcircuit memory Avl RFQ 28721-41001 Selex Galileo Ltd microcircuit memory Avl RFQ 115370-0003 Thales Communications Inc microcircuit memory Avl RFQ 058-002131-001 Texas Instrument Inc microcircuit memory Avl RFQ 058-002131-001 Intersil Corporation microcircuit memory Avl RFQ 058-002131-001 National Semiconductor Corp microcircuit memory Avl RFQ 058-002131-001 Philips Semiconductors Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962010781814MRC Criteria Characteristic ADAQ BODY LENGTH 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM ADAT BODY WIDTH 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ADAU BODY HEIGHT 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 512.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 6 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR -0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.5 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 26916-058-002131 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D TTQY TERMINAL TYPE AND QUANTITY 16 FLAT LEADS
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 512.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | -0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 26916-058-002131 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |