NSN 5962-01-085-7962 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962010857962 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010857962 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 226604-0072 under NSN 5962-01-085-7962 of Microcircuit Memory manufactured by Texas Instrument Inc.
Federal Supply Class of NSN 5962-01-085-7962 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-085-7962, 5962010857962
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Part No Manufacturer Item Name QTY RFQ 226604-0072 Texas Instrument Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962010857962MRC Criteria Characteristic MEMORY ABHP OVERALL LENGTH22 1 MILLIMETERS MAXIMUM MEMORY ABKW OVERALL HEIGHT8 2 MILLIMETERS NOMINAL MEMORY ABMK OVERALL WIDTH7 9 MILLIMETERS MAXIMUM MEMORY ADAQ BODY LENGTH22 1 MILLIMETERS MAXIMUM MEMORY ADAT BODY WIDTH6 6 MILLIMETERS MAXIMUM MEMORY ADAU BODY HEIGHT4 6 MILLIMETERS MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING0 5 MILLIWATTS MEMORY AFGA OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDBIPOLAR AND COMPATIBLE DTL AND HIGH SPEED AND EXPANDABLE AND MONOLITHIC MEMORY CQSJ INCLOSURE MATERIALPLASTIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN11 INPUT MEMORY CRHL BIT QUANTITY1024 MEMORY CSWJ WORD QUANTITY256 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC4 5 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC40 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 40 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TTQY TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ABHP | OVERALL LENGTH22 1 MILLIMETERS MAXIMUM |
| MEMORY | ABKW | OVERALL HEIGHT8 2 MILLIMETERS NOMINAL |
| MEMORY | ABMK | OVERALL WIDTH7 9 MILLIMETERS MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH22 1 MILLIMETERS MAXIMUM |
| MEMORY | ADAT | BODY WIDTH6 6 MILLIMETERS MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT4 6 MILLIMETERS MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING0 5 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDBIPOLAR AND COMPATIBLE DTL AND HIGH SPEED AND EXPANDABLE AND MONOLITHIC |
| MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN11 INPUT |
| MEMORY | CRHL | BIT QUANTITY1024 |
| MEMORY | CSWJ | WORD QUANTITY256 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC4 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC40 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 40 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |