NSN 5962-01-087-6738 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962010876738 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010876738 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Freescale Semiconductor Inc , Raytheon Aircraft , Dla Land And Maritime , Scientific Atlanta Inc , Rockwell Automation Inc , Delta Data Systems Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS2716JL, TMS2716C, TMS2716-45JL, TMS2716, ROM PROM HEAD 009 under NSN 5962-01-087-6738 of Microcircuit Memory manufactured by Texas Instrument Inc, Freescale Semiconductor Inc, Raytheon Aircraft, Dla Land And Maritime, Scientific Atlanta Inc.
Federal Supply Class of NSN 5962-01-087-6738 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-087-6738, 5962010876738
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Part No Manufacturer Item Name QTY RFQ TMS2716JL Texas Instrument Inc microcircuit memory Avl RFQ TMS2716C Freescale Semiconductor Inc microcircuit memory Avl RFQ TMS2716-45JL Texas Instrument Inc microcircuit memory Avl RFQ TMS2716-45JL Raytheon Aircraft microcircuit memory Avl RFQ TMS2716 Raytheon Aircraft microcircuit memory Avl RFQ ROM PROM HEAD 009 Dla Land And Maritime microcircuit memory Avl RFQ DMS 85018B Dla Land And Maritime microcircuit memory Avl RFQ 86327 Scientific Atlanta Inc microcircuit memory Avl RFQ 500068 Rockwell Automation Inc microcircuit memory Avl RFQ 213Z111U01 Delta Data Systems Corp microcircuit memory Avl RFQ
Characteristics Data of NSN 5962010876738MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.600 INCHES MAXIMUM ADAU BODY HEIGHT 0.185 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 714.0 MILLIWATTS AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED W/DECODED OUTPUT AND MONOLITHIC AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/ENABLE AND HERMETICALLY SEALED CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 12 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 12.6 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN FEAT SPECIAL FEATURES ERASABLE TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 714.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | W/DECODED OUTPUT AND MONOLITHIC AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/ENABLE AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 12.6 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | ERASABLE |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |