NSN 5962-01-097-3895 of Microcircuit Memory - Parts Details
Alternative NSN: 5962010973895 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 010973895 |
NCB Code: USA (01) |
Manufacturers: Dla Land And Maritime , Advanced Micro Devices Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers DMS 88061B, AM9130ADM, AM9130A DMC under NSN 5962-01-097-3895 of Microcircuit Memory manufactured by Dla Land And Maritime, Advanced Micro Devices Inc.
Federal Supply Class of NSN 5962-01-097-3895 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-097-3895, 5962010973895
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Part No Manufacturer Item Name QTY RFQ DMS 88061B Dla Land And Maritime microcircuit memory Avl RFQ AM9130ADM Advanced Micro Devices Inc microcircuit memory Avl RFQ AM9130A DMC Advanced Micro Devices Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962010973895MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 060 INCHES MINIMUM AND 1 110 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 380 INCHES MINIMUM AND 0 400 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 110 INCHES MINIMUM AND 0 130 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING578 0 MILLIWATTS MEMORY AFGA OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER AND WENABLE AND WSTORAGE AND WDECODED OUTPUT MEMORY CQSJ INCLOSURE MATERIALCERAMIC AND GLASS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN17 INPUT MEMORY CRHL BIT QUANTITY1024 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TTQY TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 060 INCHES MINIMUM AND 1 110 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 380 INCHES MINIMUM AND 0 400 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 110 INCHES MINIMUM AND 0 130 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING578 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER AND WENABLE AND WSTORAGE AND WDECODED OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN17 INPUT |
MEMORY | CRHL | BIT QUANTITY1024 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT |