NSN 5962-01-099-5903 of Microcircuit Memory - Parts Details
Alternative NSN: 5962010995903 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 010995903 |
NCB Code: USA (01) |
Manufacturers: General Dynamics Advanced Technology , Advanced Micro Devices Inc , Intel Corp Sales Office , Dla Land And Maritime |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 15-1216657-30, 15-1242451-2, AM9708DMB, MD2708 B, ROM PROM FAMILY 014 under NSN 5962-01-099-5903 of Microcircuit Memory manufactured by General Dynamics Advanced Technology, Advanced Micro Devices Inc, Intel Corp Sales Office, Dla Land And Maritime.
Federal Supply Class of NSN 5962-01-099-5903 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-099-5903, 5962010995903
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Part No Manufacturer Item Name QTY RFQ 15-1216657-30 General Dynamics Advanced Technology microcircuit memory Avl RFQ 15-1242451-2 General Dynamics Advanced Technology microcircuit memory Avl RFQ AM9708DMB Advanced Micro Devices Inc microcircuit memory Avl RFQ MD2708 B Intel Corp Sales Office microcircuit memory Avl RFQ ROM PROM FAMILY 014 Dla Land And Maritime microcircuit memory Avl RFQ
Characteristics Data of NSN 5962010995903MRC Criteria Characteristic ADAQ BODY LENGTH 1.285 INCHES MAXIMUM ADAT BODY WIDTH 0.600 INCHES MAXIMUM ADAU BODY HEIGHT 0.175 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.8 WATTS AFGA OPERATING TEMP RANGE -55.0/+100.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+125.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 11 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 20.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE EPROM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.285 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.175 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.8 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+100.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | EPROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |